[Solved] VE320-Quiz 8

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[Solved] VE320-Quiz 8

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  1. Draw the C-V curves of a MOS capacitor with n-type Si as the substrate, at low frequency and high frequency, respectively. Explain why they are different.
  2. Consider an n+ polysilicon gate on silicon dioxide with a p-type silicon substrate doped to Na = 3 1016 cm-3. Assume Qss = 5 1010 cm-2. Determine the required oxide thickness such that the threshold voltage is VTN =+0.65 V. Please provide the process of derivation.

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[Solved] VE320-Quiz 8[Solved] VE320-Quiz 8
$25