[SOLVED] C IRLumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter 940 nm

IRLumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter 940 nm
Lead Pb Free ProductRoHS Compliant
SFH 4233
Vorlaufige DatenPreliminary Data
Wesentliche Merkmale
Features
IRLichtquelle mit hohem Wirkungsgrad
Chipgroe emittierende Flache 1 x 1 mm2
max. Gleichstrom 1 A
niedriger Warmewiderstand 9 KW
Schwerpunktswellenlange 940 nm
ESDsicher bis 2 kV nach JESD22A114E
Erweiterte Korrosionsfestigkeit
s.a. Abschnitt Mazeichnung
Anwendungen
Infrarotbeleuchtung fur Kameras
Uberwachungssysteme
FahrerAssistenz Systeme
Beleuchtung fur Bilderkennungssysteme
Sicherheitshinweise
Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot Strahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheits richtlinien der IECNormen 608251 und 62471 behandelt werden.
SFH 4233320
1 gemessen mit Ulbrichtkugelmeasured with integrating sphere
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IR lightsource with high efficiency
diesize emitting area 1 x 1 mm2
max. DCcurrent 1 A
Low thermal resistance 9 KW
Center of spectral emission at 940 nm
ESD safe up to 2 kV acc. to JESD22A114E Superior Corrosion Robustness
see chapter package outlines
Applications
Infrared Illumination for camerasSurveillance systems
Driver assistance systems
Machine vision systems
Safety Advices
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 608251 and IEC 62471.
Typ Type
Bestellnummer Ordering Code
Q65110A8901
Gesamtstrahlungsfluss1 IF1A, tp10 ms Total Radiant Flux1
e mW
typ. 500

Grenzwerte TA25 C Maximum Ratings
Betriebs und Lagertemperatur
Operating and storage temperature range
Sperrschichttemperatur Junction temperature
Sperrspannung Reverse voltage
Vorwartsgleichstrom Forward current
Stostrom,tp 200s,D0 Surge current
Leistungsaufnahme Power consumption
Warmewiderstand SperrschichtLotstelle Thermal resistance junctionsoldering point
Kennwerte TA25 C Characteristics
Wellenlange der Strahlung Wavelength at peak emission IF 1A,tp 10ms
CentroidWellenlange der Strahlung Centroid wavelength
IF 1A,tp 10ms
Spektrale Bandbreite bei 50 von Imax Spectral bandwidth at 50 of Imax
IF 1A,tp 10ms
Abstrahlwinkel Half angle
Aktive Chipflache Active chip area
Abmessungen der aktiven Chipflache Dimension of the active chip area
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C C V
A
A
W KW
nm
nm
nm
Grad deg.
mm2 mm2
SFH 4233
Bezeichnung Parameter
Symbol Symbol
Top , Tstg
TJ
VR
IF
IFSM
Ptot
RthJS
Wert Value
40 125
145
1
1
5
1.8
9
Einheit Unit
Bezeichnung Parameter
Symbol Symbol
peak
centroid

A
LB LW
Wert Value
950
940
35
60
1
11
Einheit Unit
2

SFH 4233
Kennwerte TA25 C Characteristics contd
Schaltzeiten, Ie von 10 auf 90 und von 90 auf10,IF 5A,RL 50
Switching times, e from 10 to 90 and from 90to10,IF 5A,RL 50
Durchlassspannung Forward voltage
IF 1A,tp 100s IF 5A,tp 100s
Strahlstarke Radiant intensity
IF 1A,tp 100s
Temperaturkoeffizient von Ie bzw. e Temperature coefficient of Ie or e
IF 1A,tp 10ms
Temperaturkoeffizient von VF Temperature coefficient of VF IF 1A,tp 10ms
Temperaturkoeffizient vonTemperature coefficient ofIF 1A,tp 10ms
ns
V V
mWsr
K
mVK
nmK
Bezeichnung Parameter
Symbol Symbol
trtf
VF VF
Ie
TCI
TCV
TC,centroid
Wert Value
814
1.41.8 2.02.9
170
0.3
2
0.3
Einheit Unit
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3

SFH 4233
Gesamtstrahlungsfluss1
Total Radiant Flux1
e e
Bezeichnung Parameter
Symbol
e min e max
CB
320 500
Werte Values
DA
400 630
DB
500 800
Einheit Unit
Gesamtstrahlungsfluss mW Total Radiant Flux mW IF 1A,tp 10ms
1 Nur eine Gruppe in einer Verpackungseinheit Streuung kleiner 1.6:1Only one group in one packing unit variation lower 1.6:1
Abstrahlcharakteristik
Radiation Characteristics Irelf
4030
20
100
OHL01660

1.0
0.8
0.6
0.4
0.2
0
50
60
70
80
90100
1.0 0.8
0.6
0.4
0204060
80100120
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SFH 4233
Relative spektrale Emission Relative Spectral Emission Irel f
Durchlassstrom Forward Current IFfVF
Single pulse, tp100 s
Relativer Gesamtstrahlungsfluss Relative Total Radiant Flux ee1AfIF
Single pulse, tp100 s
100
I rel
80
60
40
20
0
800 850 900 950
OHF04133
nm 1050

101 A
IF
100 5
101 5
102
OHF04405
0 0.5
1 1.5
2 V 2.5 VF
101 OHF04290
e e 1 A
100 5
101 5
102 5
103
102 5101 5100A101
IF
Max. zulassiger Durchlassstrom Max. Permissible Forward Current IF fTA,RthJS9KW
Zulassige Impulsbelastbarkeit Permissible Pulse Handling CapabilityIFftp,TS 85C, Duty cycle Dparameter
5.5 A
IF
4.5
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
OHF04177
tP T
D tP
IF
T
D 0.005 0.01 0.02 0.05 0.1 0.2 0.33 0.5
1
0
105 104 103 102 101 100 101 s 102
tp
1.1
IA F
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
OHF04369
0
0 20 40 60 80 100 C130
TS
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5

SFH 4233
Mazeichnung1 Package Outlines
6.2 0.244
5.8 0.228 4.25 0.167 4.15 0.163
0.81 0.031
0.73 0.028
R0.85 0.033
1.9 0.075 1.7 0.067
00.1 0.004
0.65 0.026 0.45 0.018

Cathode
1.1 0.04
0.9 0.035 2.0 0.079 1.6 0.063
3
GPLY7072
Korrosionsfestigkeit besser als EN 60068260 method 4:
mit erweitertem Korrosionstest: 40C90rh15ppm H2S336h
Corrosion robustness better than EN 60068260 method 4:
with enhanced corrosion test: 40C90rh15ppm H2S336h
Kathodenkennung: Cathode mark:
GewichtApprox. weight:
GurtungPolaritat und Lage
Method of TapingPolarity and Orientation
Markierung mark
0.2 g
Verpackungseinheit 800Rolle, 180 mm Packing unit 800reel, 180 mm
CathodeCollector Side
4 0.157
0.3 0.012
1.55 0.061
2 0.079
0.3 0.012
1.9 0.075
6.35 0.250 8 0.315
OHAY0508
1 Mae in mm inchDimensions in mm inch 20100518
6
0.29 0.011 0.24 0.009
12.4 0.488 24 0.945
11.2 0.441 10.8 0.425 1.2 0.047 0.8 0.031
1.75 0.069 11.5 0.453
5.25 0.206
7.35 0.289
7.2 0.283 6.8 0.268
5.35 0.210
4.2 0.165

Empfohlenes Lotpaddesign Recommended Solder Pad Design
SFH 4233
11.6 0.457
12.0 0.472 11.6 0.457 1.6 0.063
2.5 0.098 4.0 0.157
1.6 0.063 Kupfer
4.0 0.157 Heatsink attach
Footprint
3 Lotstellen
3 solder points
Thermisch optimiertes PCB Thermal enhanced PCB
OHAY0681
Copper Lotstopplack
Solder resist
Lotpasten Schablone Solder paste stencil
Bare Copper Freies Kupfer
Achtung:
Anode und Heatsink sind elektrisch verbunden
Attention:
Anode and Heatsink are electrically connected
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0.3 0.012
2.3 0.091 10 0.394
2.3 0.091

SFH 4233
Lotbedingungen Soldering Conditions
Reflow Lotprofil fur bleifreies Loten
Reflow Soldering Profile for lead free soldering
Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2
nach JSTD020C acc. to JSTD020C
300C
T 250 200 150 100 50 0
OHLA0687
255C 240C
217C
Ramp Up 3 Ks max
25C
Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile
120 s max
260C 0C 5C
245C 5C
235C 5C 0C
10 s min
30 s max
6 Ks max 100 s max
Ramp Down
0 50
100 150 200
250
s 300
t
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstrae 4, D93055 Regensburg
www.osramos.com
All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help youget in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.
Components used in lifesupport devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in lifesupport devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a lifesupport device or system whose failure can reasonably be expected to cause the failure of that lifesupport device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended a to be implanted in the human body, or b to support andor maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
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